PART |
Description |
Maker |
Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A) Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲) Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲)
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TECCOR[Teccor Electronics] Littelfuse, Inc. TE Connectivity, Ltd.
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MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
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Catalyst Semiconductor EEPROM ON Semiconductor NXP Semiconductors N.V.
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MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET 5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block 50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block 50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block 50з High Linearity Low Noise Internally Biased Wideband Gain Block From old datasheet system
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ANADIGICS[ANADIGICS, Inc]
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74ALVCH16374 74ALVCH16374_2 ACH16374DL ACH16374DGG |
2.5V/3.3V 16-bit edge-triggered D-type flip-flop (3-State)(2.5V/3.3V 16浣?竟缂?Е???D瑙?????涓??锛? 2.5V/3.3V 16-bit edge-triggered D-type flip-flop (3-State)(2.5V/3.3V 16位边缘触发的D触发器(三态)) 2.5V/3.3V 16-bit edge-triggered D-type flip-flop 3-State From old datasheet system 2.5 V / 3.3 V 16-bit edge-triggered D-type flip-flop (3-State)
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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74VHCT74A 74VHCT74AM 74VHCT74ASJ 74VHCT74 74VHCT74 |
Octal D-type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 AHCT/VHCT SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP14 Dual D-Type Flip-Flop with Preset and Clear AHCT/VHCT/VT SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO14
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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DM74ALS109A DM74ALS109AN DM74ALS109AM DM74ALS109AM |
From old datasheet system ALS SERIES, DUAL POSITIVE EDGE TRIGGERED J-KBAR FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO16 ALS SERIES, DUAL POSITIVE EDGE TRIGGERED J-KBAR FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP16 Dual J-K Positive-Edge-Triggered Flip-Flop with Preset and Clear(???杈圭?瑙????-K瑙?????甯??缃??娓??绔?伎
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET 12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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